Toshiba Electronic Devices & Storage Corporation has introduced the “TRSxxx120Hx Series” of 1200V Schottky barrier diodes (SBDs), expanding its third-generation silicon carbide (SiC) product lineup. These diodes are designed for various industrial applications, including photovoltaic inverters, electric vehicle (EV) charging stations, and switching power supplies. Toshiba has commenced shipments of ten new products in this series, featuring five models in a TO-247-2L package and five in a TO-247 package.
The TRSxxx120Hx Series incorporates an improved junction-barrier Schottky (JBS) structure, originally developed for Toshiba’s third-generation 650V SiC SBDs. This advancement utilizes a new metal in the junction barrier, achieving an industry-leading low forward voltage of 1.27V (typical), minimal total capacitive charge, and reduced reverse current. These features collectively contribute to significant power loss reductions in high-power applications.
Toshiba remains committed to broadening its SiC power device offerings and enhancing efficiency to minimize power loss in industrial power equipment.
Applications
- Photovoltaic inverters
- EV charging stations
- Industrial equipment switching power supplies
- Uninterruptible Power Supplies (UPS)
Key Features
- Third-generation 1200V SiC SBD
- Low forward voltage: VF = 1.27V (typical)
- Low total capacitive charge: QC = 109nC (typical) for TRS20H120H
- Low reverse current: IR = 2.0μA (typical) for TRS20H120H
Main Specifications
| Part Number | Package | Max VRRM (V) | IF(DC) (A) | IFSM (A) | VF (V) | IR (μA) | QC (nC) |
|---|---|---|---|---|---|---|---|
| TRS10H120H | TO-247-2L | 1200 | 10 | 160 | 1.27 | 1.0 | 61 |
| TRS15H120H | TO-247-2L | 1200 | 15 | 157 | 1.4 | 89 | – |
| TRS20H120H | TO-247-2L | 1200 | 20 | 155 | 2.0 | 109 | – |
| TRS30H120H | TO-247-2L | 1200 | 30 | 150 | 2.8 | 162 | – |
| TRS40H120H | TO-247-2L | 1200 | 40 | 147 | 3.6 | 220 | – |
| TRS10N120HB | TO-247 | 1200 | 5 (per leg) | 10 (both) | 1.27 | 0.5 | 30 |
| TRS15N120HB | TO-247 | 1200 | 7.5 (per leg) | 15 (both) | 0.7 | 43 | – |
| TRS20N120HB | TO-247 | 1200 | 10 (per leg) | 20 (both) | 1.0 | 57 | – |
| TRS30N120HB | TO-247 | 1200 | 15 (per leg) | 30 (both) | 1.4 | 80 | – |
| TRS40N120HB | TO-247 | 1200 | 20 (per leg) | 40 (both) | 1.8 | 108 | – |
*Note: Specifications are measured at Ta = 25°C unless otherwise specified.
For more information and to explore Toshiba’s SiC SBDs, follow the links below:
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